期刊文献+

从集成电路到集成系统 被引量:4

From integrated circuits to integrated systems
原文传递
导出
摘要 芯片与微电子系统是现代电子信息与智能技术的基础,芯片由集成电路(integrated circuits,IC)技术实现,而微电子系统则可由本文提出的集成系统(integrated systems,IS)技术实现.集成系统概念的提出参照了集成电路的思想,并基于以下4方面原因:首先,集成电路是手段,系统才是目的,单个集成电路往往不具备系统功能,需要与其他电路或元器件相结合才能构成系统.其次,标准硅基集成电路的摩尔定律已面临挑战.第三,微电子系统的前道芯片设计加工与后道封装集成逐步收敛.最后,目前的封装集成技术采取分立的实施步骤.集成系统研究如何将各种不同材料、不同工艺、不同结构的元器件、天线、集成电路芯片进行集成,实现所需功能和性能的微电子系统.集成系统的一个核心理念是能否像设计、加工集成电路一样设计、加工微电子系统.本文将介绍集成系统的背景、概念、特征、面临的挑战、需解决的关键科技问题,以及一些研究进展. Chips and microelectronic systems are the foundation of modern electronic information and intelligent technologies.Chips are actualized with the technology of integrated circuits(ICs),while microelectronic systems can be realized with the technology of integrated systems(ISs),as proposed in this article.For four main reasons,this article proposes the concept of ISs regarding the idea of the IC.First,the IC is only the means,and the system is the final objective.A single IC often does not have the functionality of a complete system and needs cooperation with other circuits or components to form a complete system.Second,the technical route of standard silicon-based ICs,namely,Moore’s Law,has faced many challenges.Third,the design and front-end-of-line(FEOL)process of ICs are gradually merged with the back-end-of-line(BEOL)integration and packaging.Finally,current package integration technologies mainly use separate implementation procedures.ISs will integrate components,antennas,and chiplets with different materials,different processes and different structures to implement microelectronic systems of specific functionality and performance.The core concept of ISs is whether microelectronic systems can be designed and fabricated just like ICs.This article introduces the background,concept,features,challenges,key scientific and technological problems,and some preliminary research progress of ISs.
作者 吴林晟 毛军发 Linsheng WU;Junfa MAO(State Key Laboratory of Radio Frequency Heterogeneous Integration,Shanghai Jiao Tong University,Shanghai 220240,China;State Key Laboratory of Radio Frequency Heterogeneous Integration,Shenzhen University,Shenzhen 518060,China)
出处 《中国科学:信息科学》 CSCD 北大核心 2023年第10期1843-1857,共15页 Scientia Sinica(Informationis)
基金 国家自然科学基金基础科学中心项目(批准号:62188102)和国家自然科学基金重大项目课题(批准号:62090011)资助。
关键词 集成电路 微电子系统 电子封装 集成系统 异质异构集成 体系架构 integrated circuits microelectronic systems electronic packaging integrated systems heterogeneous integration system architecture
  • 相关文献

参考文献2

二级参考文献26

  • 1Rosker M J. Technologies for next generation T/R mod-ules [A ]. 2007 IEEE Radar Conference [ C ]. Boston,MA, USA,2007.
  • 2Saito W, Takada Y, Kuraguchi M, et al. Recessed-gatestructure approach toward normally off high voltageAIGaN/GaNHEMT for power electronics applications[J]. IEEE Trans Electron Devices,2006,53(2) :356-362.
  • 3Brady R G, Oxley C H,Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT de-vices [J ]. IEEE Transactions on Microwave Theory andTechniques ,2008,56 : 1535-1544.
  • 4Krishnamurthy K, Green D, Vetury R, et, al. 0. 5-2. 5GHz, 10W MMIC power amplifier in GaN HEMT technol-ogy [ A ]. IEEE Compound Semiconductor Integrated Cir-cuit Symposium [ C ]. Piscataway, NJ : IEEE Press, 2009 :.
  • 5Carchon G,Vaesen K, Brebels S,De Raedt W, BeyneE,Nauwelaers B. Multilayer thin-film MCM-D for the in-tegration of high-performance RF and microwave circuits[J]. Components and Packaging Technologies, IEEEComponents, Packaging and Manufacturing TechnologyTransactions, PartA : Packaging Technologies, IEEETransactions ,2001,24(3) :510-519.
  • 6Wolff I. Design and technology of microwave and millime-terwave LTCC circuits and systerms[ A]. Int. Symp. Sig-nals ,Systerms and Electronics[ C] . 2007. 505-512.
  • 7Meinel H H. Commercial applications of millimeterwaveshistory, present status,and future trends [ J ]. IEEETrans-MTT,1995,43(7) : 1639-1653.
  • 8Lee J H, Kidera N, Pinel S, et al. A compact quasi-el-liptic dual-mode cavity filter using LTCC technology forV-band WLAN gigabit wireless systems [A]. Proceedingsof the 36th European Microwave Conference [ C ]. 2006.1377-1379.
  • 9Eun K C, Lee Y C, Choi B G, et al. L-band RF charac-teristics of LTCC embedded spiral inductors [ A ]. Proc of3rd Int Conf on Microwave and Millimeter Wave Technol-ogy Proc[ C]. South Korea,2002. 23-26.
  • 10William B, Feng L, Telesphor K, et al. Simulation, mod-eling ,and testing embedded RF capacitors in low temper-ature cofired ceramic [A]. Proc of Electronic Componentsand Technology Conf[ C]. Or lando,FL,USA,2001. 852-857.

共引文献34

同被引文献16

引证文献4

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部