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以GeSe为光吸收层的薄膜太阳电池模拟优化研究

SIMULATION AND OPTIMIZATION OF THIN-FILM SOLAR CELLS WITH GeSe AS ABSORPTION LAYER
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摘要 针对GeSe薄膜作为吸收层的薄膜太阳电池,利用Scaps-1D太阳电池模拟软件研究电池的吸收层参数对光电性能的影响,以最大光电转化效率(PCE)为优化目标,确定吸收层厚度、缺陷态密度、掺杂浓度以及电子亲和势等参数,获得0.77 V的开路电压,38.55 mA/cm^(2)的短路电流,85.21%的填充因子以及25.3%的光电转化效率。 In this paper,for thin-film solar cells with GeSe thin film as the absorber layer,the effects of the absorber layer parameters on the photovoltaic performance were studied by using Scaps-1D solar cell simulation software.Thickness,defect state density,doping density and electron affinity parameters are used to obtain open-circuit voltage of 0.77 V,short-circuit current of 38.55 mA/cm^(2),fill factor of 85.21%and photoelectric conversion efficiency of 25.3%.
作者 韩莹健 吴海峰 王丹丹 邢美波 李子睿 王瑞祥 Han Yingjian;Wu Haifeng;Wang Dandan;Xing Meibo;Li Zirui;Wang Ruixiang(Beijing Building Energy Efficient Comprehensive Utilization Engineering Technology Research Center,Beijing University of Civil Engineering and Architecture,Beijing 100044,China;Faculty of Informatics and Engineering,the University of Electro Communications,1-5-1 Chofugaoka,Chofu,Tokyo 182-8585,Japan)
出处 《太阳能学报》 EI CAS CSCD 北大核心 2023年第9期66-71,共6页 Acta Energiae Solaris Sinica
基金 北京建筑大学青年教师科研能力提升计划(X21012) 北京建筑大学研究生教育教学质量提升项目(J2022026)。
关键词 薄膜太阳电池 太阳电池效率 数值模拟 GeSe吸收层 参数优化 thin film solar cells solar cell efficiency direct numerical simulation GeSe absorber layer parameter optimization
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  • 1Goetzberger A, Hebling C, Schock H W. Photovohaic materials, History, status and outlook [ J ]. Materials Science and Engineering-Reports, 2003, 40 ( 1 ) : 1- 46.
  • 2Mishima Takahiro, Taguchi Mikio, Sakata Hitoshi, et al. Development status of high-efficiency HIT solar cells [J]. Solar Energy Materials and Solar Cells, 2011, 95(1) : 18-21.
  • 3Stangl R, Kriegel M., Maydell K V. AFORS-HET: An open-source on demand numerical PC program for simu- lation of (thin film) heterojunction solar sells, Version 1.2 [ EB/OL]. www. hmi. de/bereiche/SE/SEl / projects/aSicSi/AFORSHET.
  • 4de Juliol Barcelona. Silicon heterojunction solar ceils ob- tained by HOT-wire CVD, 2008 [EB/OL]. http:// www. tdr. cesca, es/TESIS_ UPC/AVAILABLE/TDX- 1106108-132529/01Dmc01 deO1. pdf.
  • 5Lien Shui-Yang, Wu Bing-Rui, Liu Jun-Chin, et al. Fabrication and characteristics of n-Si/c-Si/p-Si hetero- junction solar ceils using hot-wire CVD [ J ]. Thin Solid Fihns, 2008, 516(5): 747-750.
  • 6SANYO Electric Co. , Ltd. 2010 press release[ EB/OL]. http ://panasonic. net/sanyo/news/2010/01/.
  • 7de Wolf Stefaan, Kondo Michio. Nature of doped a-Si: H/c-Si interface recombination [ J ]. Journal of Applied Physics, 2009, 105(10): 103707-103707-6.
  • 8Zhao L, Li H L, Zhou C L, et al. Optimized resistivity of p-type Si substrate for HIT solar cell with A1 backsurface field by computer simulation[ J]. Solar Energy, 2009, 83 (6) : 812-816.
  • 9Dao Vinh Ai, Heo Jongku, Choi Hyungwook. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resisti- vity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell[ J ]. Solar Energy, 2010, 84(5) : 777-783.
  • 10Zhao L, Zhou C L, Li H L, et al. Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation [ J ]. Solar Energy Material and Solar Cells,2008, 92(6) : 673-681.

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