摘要
展示了高速直接调制850 nm氧化物限制垂直腔面发射激光器(VCSEL)的结果。优化设计应变InGaAs/AlGaAs量子阱以实现高微分增益,通过表面刻蚀来调节光子寿命实现响应平坦化。研制的氧化物孔径约7μm的VCSEL具有平坦的频率响应,3 dB调制带宽为24 GHz,相对噪声强度值-155 dB/Hz,未采用任何预加重和均衡技术情况下PAM4调制数据传输速率达80 Gb/s。
We present the results of a high-speed direct modulation 850 nm oxide confined vertical cavity surface emitting laser(VCSEL),optimize the design of strain InGaAs/AlGaAs quantum wells to achieve high differential gain,and adjust the photon lifetime through surface etching to achieve response flattening.The developed VCSEL with an oxide aperture of about 7μm has a flat frequency response,a 3 dB modulation bandwidth of 24 GHz,and a relative noise intensity value of-155 dB/Hz.Without any pre-emphasis and equalization technology,the PAM4 modulation data transmission rate can reach 80 Gb/s.
作者
王延靖
佟存柱
栾晓倩
蒋宁
佟海霞
汪丽杰
田思聪
孟博
WANG Yanjing;TONG Cunzhu;LUAN Xiaoqian;JIANG Ning;TONG Haixia;WANG Lijie;TIAN Sicong;MENG Bo(State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Jlight Semiconductor Technology Co.,Ltd,Changchun 130031,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2023年第10期1811-1815,共5页
Chinese Journal of Luminescence
基金
国家重点研发计划(2018YFB2201000,2021YFB2801000)
王宽城教育基金(GJTD-2020-10)
高功率半导体激光国家重点实验室基金项目(2022-CCLG-ZDSYS-005)。
关键词
垂直腔面发射激光器
高速
PAM4调制
vertical-cavity surface-emitting laser
high-speed
PAM4 modulation
