直拉单晶硅中的缺陷形成机理及控制方法

Defect Formation Mechanism and Control Method in Czochralski Monocrystalline Silicon

半导体级单晶硅作为半导体产业链中的重要原材料,其杂质、缺陷等品质对电子器件和集成电路的性能起着至关重要的作用。单晶硅生长和加工过程都不可避免地会形成各种缺陷。鉴于直拉法是目前主流的单晶硅制造方法,针对直拉法半导体级单晶硅制造技术中的晶体缺陷工程问题进行了探讨。简要介绍了半导体级单晶硅中各种晶体缺陷以及它们的形成机理。最后,总结了控制缺陷形成的主要方法。

Semiconductor-grade monocrystalline silicon is an important raw material in the semiconductor industry.Its impurities,defects and other qualities play a vital role in the performance of electronic devices and integrated circuits.Various defects are inevitable in the growth and processing of monocrystalline silicon.Since czochralski method is the mainstream monocrystalline silicon manufacturing method at present,this paper discusses the crystal defect engineering problems in the czochralski semiconductor-grade monocrystalline silicon manufacturing technology.Various crystal defects in semiconductor-grade monocrystalline silicon and their formation mechanism are briefly introduced.Finally,the main methods to control the formation of defects are summarized.