双源气相沉积法制备Si/CsPbBr_(3)光电探测器

Si/CsPbBr_(3)Photodetector Fabricated by Dual-Source Vapor Deposition

全无机钙钛矿CsPbBr_(3)薄膜具有优异的光电特性,探索其新的制备工艺并与Si集成实现良好的光电探测具有重要意义。通过双源气相沉积在Si衬底上制备了CsPbBr_(3)薄膜,并研究了CsPbBr_(3)薄膜的光学吸收、物相组成、形貌结构等性质,在此基础上构建了Si/CsPbBr_(3)异质结光电探测器,并对器件性能进行了表征。得益于气相法沉积的高质量CsPbBr_(3)薄膜,以及Si和CsPbBr_(3)对光的协同吸收,Si/CsPbBr_(3)异质结光电探测器能够实现300~1100 nm的宽光谱范围探测,并表现出了良好的光电响应。在532 nm光照下,器件的响应度和比探测率分别为24.85 mA/W和1.01×10^(11)Jones。此外,器件的响应时间为260/211μs,能实现快速的光响应。这项工作为硅基钙钛矿光电器件的制备与应用提供了新的机会。

All-inorganic perovskite CsPbBr_(3)films possess excellent optoelectronic properties,it is essential to explore innovative preparation technology and integration with Si to achieve superior photodetection.CsPbBr_(3)films were prepared on Si substrate by dual-source vapor deposition,and various properties including optical absorption,phase composition and morphological structure of the CsPbBr_(3)films were investigated.On this basis,a Si/CsPbBr_(3)heterojunction photodetector was constructed and its performance was characterized.Owing to the high quality CsPbBr_(3)films deposited by the vapor phase method and the synergistic light absorption of Si and CsPbBr_(3),the as-obtained Si/CsPbBr_(3)heterojunction photodetector can achieve a wide spectral range of 300-1100 nm detection,and shows a good photoelectric response.Under the 532 nm illumination,the responsivity and specific detectivity of photodetector are 24.85 mA/W and 1.01×10^(11)Jones,respectively.Furthermore,the response time of the device is 260/211μs,which can realize fast photoresponse.The work provides a new opportunity for the preparation and application of silicon-based perovskite photoelectric devices.