L波段220W高效率固态功率放大器

L-Band 220 W High Efficiency Solid-State Power Amplifier

为满足某系统高功率高效率固态功率放大器的需求,研制了L波段220 W高效率固态功率放大器。基于GaN高电子迁移率晶体管(HEMT)芯片,通过器件的内部匹配网络和外部匹配电路的优化,在C类工作状态下,实现了高效率的L波段160 W GaN功率器件;通过对多层结构宽边耦合器的仿真和介质材料的选用,设计了低损耗、高效率、大功率的合成器;通过对隔离变换电路和整流电路的改进,电源效率达到92%以上。该放大器末级器件采用功率合成的方式,最终饱和输出功率达到238.8 W(53.78 dBm),功率增益88 dB以上,功率附加效率达到60.9%。热仿真结果显示,在70℃壳温下,GaN功率器件结温为106℃,满足产品高可靠长寿命的需求。

In order to meet the requirements of high power and high efficiency solid-state power amplifiers in a certain system,an L-band 220 W high efficiency solid-state power amplifier was developed.Based on the GaN high electron mobility transistor(HEMT) chip,the high efficiency L-band 160 W GaN power device was realized in the Class C operation by optimizing the internal matching network and external matching circuit of the device.A low loss,high efficiency,and high power combiner was designed through the simulation of multi-layer structure wide-side coupler and the selection of dielectric material.By improving the isolation transformation circuit and rectification circuit,the power efficiency has reached over 92%.By adopting the power combine mode to the final-stage devices,the amplifier has a saturation output power of 238.8 W(53.78 dBm),a power gain of more than 88 dB,and a power added efficiency of 60.9%.The thermal simulation results show that at a shell temperature of 70 ℃,the junction temperature of GaN power device is 106 ℃,meeting the requirements of high reliability and long service life of the product.