X波段平衡式限幅低噪声放大器MMIC

X-Band Balanced Limiting Low Noise Amplifier MMIC

为满足接收机的小型化需求,基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款用于8~12 GHz的平衡式限幅低噪声放大器(LNA)单片微波集成电路(MMIC)。将Lange电桥、限幅器、LNA集成在同一衬底上,Lange电桥采用异形设计,芯片比传统尺寸降低30%以上;限幅器级间采用电感匹配结构,提升MMIC的工作带宽;LNA采用并联负反馈、源极电感负反馈以及电流复用拓扑结构,实现超低功耗和良好的稳定性。芯片采用整体最优化设计,在片测试结果表明,在工作频带内,限幅LNA MMIC芯片的增益为(25±0.2)dB(去除1 dB斜率),噪声系数小于1.6 dB,总功耗小于100 mW,耐功率大于46 dBm,该芯片尺寸为2.8 mm×2.4 mm,充分体现了集成工艺的性能和尺寸优势。

In order to realize the miniaturization of receivers,a balanced limiting low noise amplifier(LNA)monolithic microwave integrated circuit(MMIC) for 8-12 GHz based on GaAs pseudomorphic high electron mobility transistor(PHEMT) technology was designed.The Lange bridge,limiter and LNA were integrated on the same substrate.The integrated special-shaped design was adopted in Lange bridge,and the chip size reduced by more than 30% compared to the conventional chip size.Inductance matching structure was adopted between limiter stages to improve the working bandwidth of the MMIC.The shunt negative feedback,source inductor negative feedback and current multiplexing topology were used in the LNA to achieve ultra-low power consumption and good stability.The chip adopts an overall optimization design,and the on-chip test results show that within the working frequency band,the limiting LNA MMIC chip has achieved a gain of(25±0.2) dB(1 dB slope removed),a noise figure of less than 1.6 dB,a total power consumption of less than 100 mW and a power capability of greater than 46 dBm.The chip size is 2.8 mm×2.4 mm,which fully reflects the performance and size advantages of the integrated process.