1300nm应变补偿量子阱激光器光电性能研究

Study on photoelectric performance of 1300nm strain compensated quantum well laser

为了提升1300nm半导体激光器的光电特性,采取k·p方法的激光器模拟软件SiLENSe设计了GaAsSb/GaAsP/InGaAsSb应变补偿激光器,调控了有源区的能带结构,并对该结构进行了仿真计算。结果表明,与传统InGaAsSb/GaAsSb有源区对比,应变补偿结构LD2阈值电流从135mA降低至95mA。在15 A的注入电流下,工作电压从138 V降低至125 V,其输出功率从107W提高到121W,电光转换效率从521提高至646。这主要由于在势垒中引入张应变改善了有源区的能带结构,从而使载流子的泄漏受到抑制,器件性能得到了显著提升。该有源区的设计将对制备高性能中红外单模半导体激光器具有重要的理论参考价值。

In order to improve the optoelectronic characteristics of 1300 nm semiconductor laser,a GaAsSb/GaAsP/InGaAsSb active region is designed by the simulation software SiLENSE based on k·p method to regulate the Band structure of the active region,and the semiconductor laser structure is simulated and calculated.The results show that the threshold current decreases from 135 mA to 95 mA compared with the traditional InGaAsSb/GaAsSb active region.With an injection current of 1.5 A,the operating voltage is reduced from 1.38 V to 1.25 V,its output power is increased from 1.07 W to 1.21 W,and the electro optical conversion efficiency is improved from 52.1%to 64.6%.This is mainly due to the fact that band structure of the active region is improved by the introduction of tensile strain in potential barrier,which leads to suppression of carrier leakage and a significant improvement in device performance.The design of the active region will have an important theoretical reference value for the preparation of high performance mid infrared single mode semiconductor laser.