力电流联合载荷作用下GaN半导体准脆性断裂行为

Quasi-Brittle Fracture Behavior of GaN Semiconductors Under Combined Mechanical and Current Loading

压电半导体(PSC)结构在工程应用中不可避免地受电流、应力场等共同作用,多场应用环境往往导致其发生复杂的变形、断裂失效等问题。通过引入影响特征裂纹长度的电流参数,建立了压电半导体在力电流联合载荷作用下断裂行为的预测模型。经力电流联合载荷实验验证,该模型预测范围涵盖了所有强度和断裂实验数据点,表明其可以有效地预测压电半导体的准脆性断裂行为。系统研究了电流载荷对压电半导体准脆性断裂行为的影响,为复杂环境下GaN构件的可靠性设计提供了一定的理论及数据支撑。

Piezoelectric semiconductor(PSC)structures are inevitably affected by current and stress fields in engineering applications,and the multi-field application environment often leads to complex deformation,fracture failure and other problems.By introducing the current parameters that affected the characteristic crack length,a prediction model for the fracture behavior of PSC under the combined mechanical and current loading was established.Through the verification of combined mechanical and current loading experiments,the results show that the prediction range of the model covers all strength and fracture experimental data points,indicating that the model can effectively predict the quasi-brittle fracture behavior of PSC.The influences of current loading on the quasi-brittle fracture behavior of PSC were systematically studied,which provides theoretical and data support for the reliability design of GaN structures in complex environment.