摘要
Conduction filament formation,redox reaction,and mobile ion migration in solid electrolytes underpin the memristive devices,all of which are partially influenced or fully dominated by the moisture.The moisture-based physical-chemistry mechanism provides an electric tunable method to create enough dissociate conductance states for neuromorphic computing,but overconcentration moisture will corrode electrode and then causes device invalidation.This perspective goal is that surveys the moisture-dependency of dynamic at interfaces or/and switching function layer,clarifies the bottlenecks that the memristive device facing in terms of water molecule-related reaction,and gives the possible solutions.
