Rubidium-induced phase transitions among metallic,band-insulating,Mott-insulating phases in 1T-TaS_(2)

Realizing phase transitions via non-thermal sample manipulations is important not only for applications,but also for uncovering the underlying physics.Here,we report on the discovery of two distinct metal–insulator transitions in 1T-TaS_(2) via angle-resolved photoemission spectroscopy and in-situ rubidium deposition.At 205 K,the rubidium deposition drives a normal metal–insulator transition via filling electrons into the conduction band.While at 225 K,however,the rubidium deposition drives a bandwidth-controlled Mott transition as characterized by a rapid collapsing of Mott gap and a loss of spectral weight of the lower Hubbard band.Our result,from a doping-controlled perspective,succeeds in distinguishing the metallic,band-insulating,and Mott-insulating phases of 1T-TaS_(2),manifesting a delicate balance among the electronitineracy,interlayer-coupling and Coulomb repulsion.We also establish an effective method to tune the balance between these interactions,which is useful in seeking exotic electronic phases and designing functional phase-changing devices.