改性半导体材料在光催化氧化降解气态甲苯中的研究进展

Research progress of modified semiconductor materials in photocatalytic oxidation degradation of gaseous toluene

综述了近年国内外改性半导体材料用于光催化降解甲苯的研究进展,详细介绍了掺杂金属和非金属、耦合半导体和负载载体等改性方法对半导体的结构和催化性能影响,分析并讨论了改性后半导体材料光催化脱除气态甲苯的效率和反应机制,提出研发可见光利用率和光子效率高及结构性能稳定的复合型改性半导体材料是光催化降解气态甲苯的研究方向。

The research progress of modified semiconductor materials used in photocatalytic degradation of toluene was reviewed.The effects of modified methods such as doped metal or non-metal coupled semiconductor,supported semiconductor on the structure and catalytic performance of pure semiconductor are introduced in detail.The efficiency and reaction mechanism of photocatalytic removal of toluene by modified semiconductor materials were analyzed and discussed.It is suggested that the research direction of photocatalytic degradation of gaseous toluene is to develop compound modified semiconductor materials with high visible light efficiency,high photonic efficiency and stable structural properties.