基于碳化硅器件及其驱动的谐振变换器设计

Design of Resonant Converter Based on SiC Device and Its Driving

硅(Si)基电力电子器件受限于Si材料特性难以在耐压、耐温、开关频率等方面有所突破,而碳化硅(SiC)基器件因其性能优异,尤其在中高压电能变换设备的应用中前景广阔。理论与实验对比分析了SiC MOSFET与Si MOSFET,Si IGBT的特性,对驱动电路进行了分析与改进以适应不同器件驱动电压的需要,最后应用SiC MOSFET及其驱动电路搭建了100 kHz CLLC谐振变换器实验样机。说明了SiC基器件相较于Si基器件在导通、关断以及开关性能上的优势,验证了改进后驱动电路以及基于此来研制高性能电源变换器的可行性。

Limited by the characteristics of silicon(Si)materials,Si based power electronic devices are difficult to make a breakthrough in voltage resistance,temperature resistance and switching frequency.Due to their excellent performance,silicon carbide(SiC)based devices have broad prospects in the application of medium and high voltage power conversion equipment.The characteristics of SiC MOSFET and Si MOSFET,Si IGBT are compared and analyzed theoretically and experimentally.The driving circuit is analyzed and modified to meet the needs of different devices driving voltages.Finally,the experimental prototype of CLLC resonant converter with 100 kHz is built by using SiC MOSFET and its driving circuit.The advantages of SiC based devices in on,off and switching performance compared with Si based devices are explained,the feasibility of the modified driving circuit and developing high performance power converters based on these are verified.