制备超薄金属透明导电膜的研究进展

Research progress on preparation of ultra-thin metal transparent conductive films

随着柔性光电子器件的迅速发展,市场对透明导电薄膜提出了更高的要求。超薄金属薄膜具有优越的光电性能和良好的机械稳定性,成为了替代铟锡氧化物的理想材料。然而金属薄膜在基底上常为三维岛状生长模式,制备高导电性和透光性的金属薄膜具有很大的挑战。目前常见的制备超薄金属薄膜的方法有预沉积金属种子层、基底表面改性、掺杂、低温基底等。其中基底表面改性通过在基底上形成能与基底和薄膜产生键合作用的聚合物分子层,从而抑制金属原子的扩散,增强成核。该方法制备工艺简单、不会影响薄膜性能,是制备超薄金属薄膜的理想方法。预沉积金属种子层和掺杂都能增强金属薄膜在基底上的润湿性,然而引入的异质金属会带来薄膜的光学和电学损耗。低温基底能够抑制金属原子的扩散,然而该方法设备复杂,生产成本较高。本文概述了制备超薄金属透明导电膜的最新研究进展,介绍了降低薄膜阈值厚度、提高薄膜质量的几种方法和原理,最后讨论了未来超薄金属透明导电膜的研究方向。本文综述了目前制备超薄金属透明导电膜的常见方法,包括预沉积金属种子层、基底表面改性、掺杂、低温基底等方法,最后做出了总结并对未来研究趋势进行了展望。

With the rapid development of flexible optoelectronic devices,the market has put forward higher requirements for transparent conductive films.The ultra-thin metal film has excellent photoelectric property and good mechanical stability,which makes it an ideal material to replace indium tin oxide.However,it is a great challenge to prepare high conductivity and light transmittance metal films because of their three-dimensional island growth patterns on the substrate.At present,the common methods of preparing ultra-thin metal films include predeposition of metal seed layer,surface modification of substrate,doping,low temperature substrate and so on.Among them,the surface modification of substrate can form polymer molecular layers on the substrate that can be used to bond with the substrate and the film,thus inhibiting the diffusion of metal atoms and enhancing nucleation.This method is an ideal method for preparing ultra-thin metal films due to its simple preparation process and no influence on the properties of the film.Both the predeposition of metal seed layer and doping can enhance the wettability of metal film on the substrate,but the introduction of heterogeneous metals will bring optical and electrical losses.Low temperature substrates can inhibit the diffusion of metal atoms,but this method is complex and expensive to produce.The latest research progress in the preparation of ultrathin transparent conductive film is summarized,several methods and principles of reducing the thickness of the threshold and improving the quality of the film are introduced,and the future research direction of the thin transparent conductive film is discussed.