C掺杂Sb_(2)Te_(3)高速相变材料

C-doped Sb_(2)Te_(3)high-speed phase change materials

Sb_(2)Te_(3)材料是一种具有快速相变特性的硫系化合物材料,但其热稳定性较差,高、低阻态之间的阻值差异小,不适宜制备相变存储器件。为解决Sb_(2)Te_(3)材料的高、低阻态的阻值差异小,热稳定性差的问题,提出对Sb_(2)Te_(3)材料进行碳(C)掺杂改性。试验制备了基于C掺杂Sb_(2)Te_(3)材料(C-Sb_(2)Te_(3))的高速相变存储器件,并分析了氢(H)等离子体处理加热电极对相变存储器件性能的影响。基于C-Sb_(2)Te_(3)材料制备的相变存储器件的高、低阻态阻值比达两个数量级,器件的擦写循环次数达10^(5)次;分析氢(H)等离子体处理对器件性能的影响,加热电极经过H等离子体处理的相变存储器件高、低阻态的阻值稳定。研究表明:掺杂C使得Sb_(2)Te_(3)材料的结晶温度上升、晶粒细化;使用C掺杂Sb_(2)Te_(3)材料制备相变存储器件,并进行H等离子体处理,可得到一种具有热稳定性高、阻值稳定、能多次循环擦写的高速相变存储器件。

Sb_(2)Te_(3)material is a chalcogenide material with rapid phase transition characteristics.However,the thermal stability of Sb_(2)Te_(3)material is poor and the difference between high and low resistance is small,which is not suitable for the manufacture of phase change storage devices.In order to solve the problem of the small difference between high and low resistance values of Sb_(2)Te_(3)material and poor thermal stability,Carbon(C)doping modification of Sb_(2)Te_(3)material was proposed.In this study,a high-speed phase change memory device based on C-doped Sb_(2)Te_(3)material(C-Sb_(2)Te_(3))was produced.In addition,the effect of hydrogen(H)plasma treatment on the performance of phase change memory devices was analyzed,and high-speed phase change memory devices with good thermal stability were prepared based on C-doped Sb_(2)Te_(3)material.The ratios between the high and low resistances of the phase change memory device prepared based on C-Sb_(2)Te_(3)material reached two orders of magnitude.The number of erasing and writing cycles of the device reached 10^(5) times.After the heating pole of the phase change memory device was treated with H plasma,the resistance of the high and low resistance states of the device was stable.The results show that:C-doping can make the crystallization temperature of Sb_(2)Te_(3)material increase and grains shrink;using C-doped Sb_(2)Te_(3)material to prepare a phase change memory device,and treating with H plasma,can obtain a high-speed phase change memory device with high thermal stability,stable resistance value,and multiple cycles of erasing and writing.