大功率780nm单管连续输出16W和巴条连续输出180W半导体激光器

High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation

设计并制备了780 nm大功率半导体激光器的单管和巴条。采用金属有机化学气相沉积技术制备的外延结构,分别使用GaAsP和GaInP作为量子阱和波导层,限制层是具有高带隙的AlGaInP材料。量子阱与波导层带隙0.15 eV,波导层与限制层带隙0.28 eV,抑制了载流子泄露。1.55μm厚非对称大光学腔波导结构抑制快轴高阶模,同时缓解腔面损伤问题。为进一步提高腔面损伤阈值,利用超高真空解理和钝化技术,在腔面上沉积了非晶ZnSe钝化层。条宽150μm、腔长4 mm的单管器件,在电流为15 A时,输出连续功率16.3 W未出现COD现象,斜率效率达到1.27 W/A,电光转换效率为58%,慢轴发散角9.9°,光谱半高宽为1.81 nm。填充因子为40%的厘米巴条,在192 A下实现连续输出功率180 W,电光转换效率为50.7%,光谱宽度仅为2.2 nm。

The single emitter and bars of 780 nm semiconductor laser have been designed and fabricated.The epitaxial layers were prepared by the metal organic chemical vapor deposition technology.GaAsP and GaInP were used as the quantum well and waveguide layer,respectively.The confinement layers were AlGaInP material with low refractive index.The bandgap between the quantum well and the waveguide layer was 0.15 eV,while the bandgap between the waveguide layer and the confinement layer was 0.28 eV.The high bandgap was effective in suppressing carrier leakage.The 1.55μm thick large optical cavity epitaxy structure increases the beam’s size and alleviates the cavity optical surface damage problem.The asymmetric structure suppresses high-order fast axis modes.Using the ultra-high vacuum cleavage and passivation technology,an amorphous ZnSe passivation layer was deposited on the laser cavity facets.The ZnSe passivated single emitter device with 150μm width and 4 mm cavity length,did not show COD phenomenon with 16.3 W continuous-wave output,when the current was 15 A.In this case,the slope efficiency reached 1.27 W/A while the electro-optic conversion efficiency was 58%,and the divergence angle of slowaxis was 9.9°and the spectral width was 1.81 nm.The 1-cm laser bar with lateral emitter fill factor of 40%,reached continuous-wave 180 W output power at 192 A,and the electro-optic conversion efficiency was 50.7%,the spectral width was 2.2 nm.