α-In_(2)Se_(3)修饰的多层MoS_(2)记忆晶体管的光电协控阻变特性研究

Resistive Characteristics ofα-In_(2)Se_(3)-modified Multilayer MoS_(2)Memtransistors Under Photoelectric Control

记忆晶体管将忆阻器和场效应晶体管结合起来,这种结构能够引入多端口控制,对于丰富存储器的调控手段具有重要的意义。使用微机械剥离法依次转移了多层MoS_(2)和α-In_(2)Se_(3),搭建了以α-In_(2)Se_(3)作为修饰的MoS_(2)记忆晶体管,并对其在电场、光场和光电协同控制下的阻变特性进行了研究。实验结果表明,器件表现出单极性阻变特性并且能够在128个循环和104s的时间内保持良好的耐久性,器件受栅极电压和单色光照调控效果明显,在电场和光场的协同控制下可以实现开关比在1.8×10^(1)~4.2×10^(3)的范围内变化。其阻变机理可以归因于多层MoS_(2)中缺陷捕获载流子对肖特基势垒的调制和氧离子焦耳热梯度填补S空位对沟道电导的调制。

Memtransistors combine memristors and field-effect transistors,and this structure is able to introduce multi-port control,which is important for enriching the means of memory regulation.Multilayer MoS_(2)andα-In_(2)Se_(3)were transferred sequentially using micromechanical exfoliation method,and aα-In_(2)Se_(3)-modified MoS_(2)memtransistor was constructed.Its resistive characteristics were investigated using optical control,electrical control and photoelectric cooperative control respectively,which exhibited unipolar resistive characteristics as well as good durability in 128 cycles and 10~4 s,and the device can be modulated by the gate voltage and monochromatic illumination with the switching ratio varied in the range of 1.8×10^(1)~4.2×10^(3)under photoelectric cooperative control.The resistive mechanism can be attributed to the modulation of the Schottky barrier by defect trapped-carriers and the influences of the channel conductance by S vacancies filled with oxygen ions via Joule thermal gradient.