硅终端金刚石半导体与场效应管器件研究进展

Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices

金刚石作为超宽禁带半导体材料的代表,逐渐成为大家关注的热点。尽管在材料制备、器件研制与性能方面取得了一定进展,但其半导体掺杂技术至今没有很好解决。氢终端金刚石由于具有典型的二维空穴气而被广泛应用于微波功率器件的研究,但其存在稳定性不佳、界面态浓度较高等问题。相比而言,近年来出现的硅终端(C—Si)金刚石具有比氢终端(C—H)金刚石更低的界面态密度、更高的阈值电压、载流子密度和稳定性等优点,有望解决氢终端金刚石半导体器件的问题。硅终端金刚石电子器件表现出高阈值电压的增强型特性,其机制尚不明确。本文从氢终端金刚石的结构、导电机理出发,分析限制其发展的主要问题,并综述了硅终端金刚石的导电机理、制备方法以及相应的界面结构,初步分析了硅终端MOSFETs的性能水平,最后阐述了目前硅终端金刚石发展存在的问题并展望了其发展前景。

Diamond as a representative of ultra-wide bandgap semiconductor material has attracted recent attention.Although some progress is made in material preparation,device development and performance,semiconductor doping technology is not resolved so far.Hydrogen-terminated(C–H)diamond is widely used in microwave power devices due to its typical two-dimensional hole gas,but it has some problems such as poor stability and high interface state concentration.In contrast,silicon-terminated(C–Si)diamond that emerged in recent years has some advantages of lower interface state density,higher threshold voltage,carrier density,and stability rather than C–H diamond.C–Si diamond electronics exhibit the enhanced properties with high threshold voltages through an unclear mechanism.This review analyzed the structure and conduction mechanism of C–H diamond,the main problems that limit its development,represented the conduction mechanism,preparation method and corresponding interface structure of C–Si diamond,and discussed the performance level of C–Si diamond MOSFETs.In addition,the existing problems in the development of C–Si diamond were also discussed,and its future development was prospected.