沉积温度对不同Co含量WC-Co/SiC/Diamond界面结合性能的影响

Influence of Deposition Temperature on Interface Bonding Properties of WC-Co/SiC/Diamond with Different Co Content

本文构建了Co质量分数分别为6%、8%、10%和12%的WC-Co/SiC/Diamond金刚石涂层硬质合金界面模型,利用分子动力学方法模拟了不同沉积温度对其界面结合强度的影响,从黏附功及键长分布两个方面进行具体分析。黏附功分析结果表明,与其他三种Co含量界面模型相比,WC-6%Co/SiC/Diamond界面模型在七个沉积温度下所包含的两种界面的黏附功值均为最高值,并且在不同沉积温度下,WC-6%Co/SiC/Diamond界面模型所包含的WC-6%Co/SiC界面、SiC/Diamond界面的黏附功分别在1123、1173 K时最大,为2.468、5.394 J/m^(2)。键长分布概率分析结果表明,与其他三种Co含量界面模型相比,在任一沉积温度下,WC-6%Co/SiC/Diamond界面模型各界面处键长分布范围的最大值较小,且在1123 K时在WC-6%Co基体上沉积SiC中间层,在1173 K时在SiC中间层上沉积Diamond涂层后,该界面模型界面处的键长最短,键能最大,界面结合性能最好。

Interface models of diamond-coated cemented carbide tool WC-Co/SiC/Diamond with Co mass fraction of 6%,8%,10%and 12%were constructed.The influences of different deposition temperatures on the interface bonding strength were simulated with the molecular dynamics method,and the reasons were analyzed from perspectives of adhesion work and bond length distribution.The adhesion work analysis indicates that,compared with the other three Co content interface models,the two interfaces in WC-6%Co/SiC/Diamond interface model have the highest adhesion work values at seven deposition temperatures.At different deposition temperatures,both interfaces of WC-6%Co/SiC and SiC/Diamond in WC-6%Co/SiC/Diamond have the highest adhesion work values of 2.468 and 5.394 J/m^(2) at 1123 and 1173 K,respectively.The analysis results of bond length distribution indicate that,at any deposition temperature,compared with the other three Co content interface models,the maximum value of the bond length distribution range at each interface of WC-6%Co/SiC/Diamond is smaller.The interface model obtained by sequentially depositing SiC layer on WC-6%Co substrate at 1123 K and diamond coating on SiC layer at 1173 K has the shortest interface bond length,the largest bond energy,and the best interface bonding property.