摘要
Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS_(2)/α-In_(2)Se_(3) memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current(EPSC/IPSC), long-term potentiation/depression(LTP/LTD), and paired-pulse facilitation/depression(PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.
作者
相韬
陈凤翔
李晓莉
王小东
闫誉玲
汪礼胜
Tao Xiang;Fengxiang Chen;Xiaoli Li;Xiaodong Wang;Yuling Yan;Lisheng Wang(Department of Physics Science and Technology,School of Science,Wuhan University of Technology,Wuhan 430070,China)
基金
Project supported by the National Natural Science Foundation of China (Grant No. 51702245)。