摘要
随着摩尔定律推进至纳米级节点,以硅通孔(TSV)、重布线层(RDL)、薄芯片堆叠键合等为支撑的三维集成被认为是延续摩尔定律的重要途径.Cu/SiO_(2)混合键合可以持续缩小芯片间三维互连节距、增大三维互连密度,是芯片堆叠键合前沿技术.近年来它在互补金属氧化物半导体(CMOS)图像传感器(CIS)、Xtacking 3D NAND、2.5D/3D集成等商业化应用突破,使之成为国内外领先半导体研究机构研究关注的热点话题.本文将系统梳理混合键合技术的研究历史与产业应用现状,重点分析近年来国内外代表性研究工作的技术路线、研究方法、关键问题等,在此基础上,对混合键合技术的未来发展方向进行展望.
As Moore’s Law advances to nanoscale nodes,three-dimensional integration supported by Through Silicon Via(TSV),ReDistribution Layer(RDL),thin chiplet stacking bonding,et al.is considered an important way to continue Moore’s Law.Cu/SiO_(2)hybrid bonding can continuously reduce the three-dimensional interconnection pitch between chips and increase the three-dimensional interconnection density.It is a cutting-edge technology in chip stacking bonding.In recent years,it has made breakthroughs in commercial applications such as Complementary Metal Oxide Semiconductor(CMOS)Image Sensor(CIS),Xtacking 3D NAND,and 2.5D/3D integration,making it a hot topic of research and attention for leading semiconductor research institutions at home and abroad.This article will systematically review the research history and industrial application status of hybrid bonding technology,with a focus on analyzing the technical routes,research methods,and key issues of representative research work at home and abroad in recent years.Based on this,it will prospect the future development direction of hybrid bonding technology.
作者
马盛林
张桐铨
MA Shenglin;ZHANG Tongquan(Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361000,China)
出处
《微电子学与计算机》
2023年第11期22-42,共21页
Microelectronics & Computer
基金
厦门大学校长基金项目(2072022)。
