SiC MOSFET单粒子漏电退化的影响因素

Influencing Factors of Single Event Leakage Degradation of SiC MOSFETs

高压功率器件是未来航天器进一步发展的关键,对SiC金属-氧化物-半导体场效应晶体管(MOSFET)等高压大功率器件的抗辐射研究亟待突破。在不同偏置条件下对器件的单粒子效应(SEE)进行实验,结果表明,SiC MOSFET单粒子漏电退化效应与漏源电压、离子注量以及反向栅源电压呈正相关。为进一步研究SiC MOSFET单粒子效应机理,结合实验数据进行TCAD仿真,发现器件发生单粒子效应时存在两种失效模式,第一种失效模式与Si基MOSFET类似,而第二种失效模式与SiC器件的特有结构密切相关,容易形成更高的分布电压,导致栅氧化层烧毁失效。该结果为抗辐照加固器件的研究提供了理论支撑。

High-voltage power devices are the key to the further development of spacecraft in the future,and the research on the radiation resistance of high-voltage and high-power devices such as SiC metal-oxide-semiconductor field effect transistors(MOSFETs)needs to be broken through.The single event effect(SEE)of the device was tested under different bias conditions.The test results show that the single event leakage degradation effect is positively correlated with drain-source voltage,ion injection quantity and reverse gate-source voltage.In order to further study the mechanism of single event effect of the SiC MOSFET,TCAD simulation was carried out with experimental data,and it shows that there are two failure modes when single event effect occurs in the device.The first failure mode is similar to that of the Si MOSFET,while the second failure mode is closely related to the unique structure of the SiC device,which is easy to form a higher distributed voltage,leading to burnout failure of the gate oxide layer.The results provide theoretical support for the research of radiation hardened devices.