摘要
In-memory computing based on emerging non-volatile memory arrays holds a great promise to cope with the drastically increased demand for data processing.Phase-change material(PCM)is a leading candidate for in-memory computing,which utilizes the amorphous-crystalline phase transition and the associated changes in electrical resistance or optical transmission for data encoding[1].
作者
王柏骞
李贤斌
孙洪波
Bai-Qian Wang;Xian-Bin Li;Hong-Bo Sun(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;State Key Laboratory of Precision Measurement Technology and Instruments,Department of Precision Instrument,Tsinghua University,Beijing 100084,China)
基金
supported by the National Key R&D Program of China(2022ZD0117600)
the National Natural Science Foundation of China(12274172 and 12274180)。
