CdZnTe光电探测器的应用研究

Research on Application of the CdZnTe Photodetectors

CdZnTe(碲锌镉)是一种性能优异的三元化合物半导体材料,与制备成本高、尺寸受限的CdZnTe体单晶材料相比,CdZnTe薄膜具有生长周期短、工艺简单、可大面积制备的优势。文章开展了电极结构、薄膜厚度及退火处理对CdZnTe光电探测器性能的影响研究。研究表明,相对于采用金(Au)电极的CdZnTe光电探测器,采用镓掺杂氧化锌(GZO)电极的CdZnTe光电探测器的灵敏度更高,响应时间更短;薄膜厚度的增加提高了CdZnTe光电探测器的灵敏度,但响应速度略有降低;退火处理提高了CdZnTe光电探测器的灵敏度,但响应速度降低,其将被广泛应用于太阳能电池、辐射探测器及医疗成像器件等领域,也可以实现光电探测功能的进一步提升。

Cadmium zinc telluride is a ternary compound semiconductor material with excellent properties.Com-pared to the CdZnTe bulk single crystal with high cost and limited dimension size,the CdZnTe film have drawn great attention because of its short growth duration,simple process,and the large film area.In this thesis,the influence of electrode structure,flim thickness and annealing treatment on the performance of CdZnTe photode-tectors were investigated.The results show that,compared with the CdZnTe photodetector with a Au electrode,the CdZnTe photodetector with a GZO electrode hosts higher sensitivity and faster response time.The increase of film thickness improves the sensitivity of the CdZnTe photodetector,but the response speed is slightly reduced.Through the post annealing,the sensitivity of the CdZnTe photodetector is improved,but the response speed de-creases.It will be widely applied to solar cells,radiation detectors,and medical imaging devices due to its ex-cellent properties,and it can also further enhance the photoelectric detection function.