摘要
针对在片电容参数溯源及测量不准确问题,提出一种溯源及测量方法,通过在片形式的直通线将测量结果与成熟的四端对标准电容器的量值联系起来,实现了在片电容参数的溯源。通过定量研究干扰回路对测量结果的影响,对探针系统及测量线缆的影响进行修正,准确测量在片电容值,使得测量数据的准确性可验证,计量级在片电容测量系统测量准确度提高0.08%。
A traceability and measurement method was proposed in order to solve the problem that the capacitance parameter of on-wafer traceability and inaccurate measurement.The measurement results were connected with the four-terminal par capacitor standard by the on chip straight line to realize the traceability.Adopting the quantitative research of interference loop,corrected the influence of the probe system and cable,and accurated measurement of on wafer capacitance.The measurement accuracy of the metering level's test system improved 0.08%by this method.
作者
丁晨
乔玉娥
刘岩
翟玉卫
吴爱华
DING Chen;QIAO Yu-e;LIU Yan;ZHAI Yu-wei;WU Ai-hua(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang,Hebei 050051,China)
出处
《计量学报》
CSCD
北大核心
2023年第11期1735-1739,共5页
Acta Metrologica Sinica
关键词
计量学
在片电容参数
在片直通线
四端对标准电容器
干扰回路
溯源
metrology
on-wafer capacitance
on chip straight line
four-terminal par capacitor
interference loop
traceability
