量子点为空穴传输层的钙钛矿太阳能电池性能研究

Study on performance of perovskite solar cells with quantum dots as hole transport layers

目的:合成CdSe量子点并作为钙钛矿太阳能电池的空穴传输层,研究其量子点和太阳能电池的性能。方法:利用气-液法制备不同发光波段的CdSe量子点,分析反应温度对量子点性能的影响。沉积CdSe量子点膜层作为钙钛矿太阳能电池的空穴传输层,并对组装的电池光伏性能进行评价。结果:在210℃下合成分散性较好,尺寸较均匀的闪锌矿型CdSe量子点,尺寸约为2.5 nm。CdSe膜层作为空穴传输层的电池开路电压为1.05 V、短路电流为22.5 mA/cm^(2),填充因子为0.65,光电效率为17%。而没有量子点为空穴传输层的电池效率为14.9%。结论:CdSe量子点引入可产生更多光生载流子,同时改善空穴传输层和钙钛矿膜层间的界面接触,空穴迁移率高,有利于提升电池的光伏性能。

Objective:CdSe quantum dots(QDs)were synthetized.The performance of perovskite solar cells and CdSe QDs were studied with quantum dots as the hole transport layer.Methods:CdSe quantum dots(QDs)were prepared by the hot-bubbling method with different wavebands.The effect of reaction temperature on the characteristics of CdSe QDs was investigated to obtainsemiconductor CdSe luminescent QDs.CdSe QDs film was deposited as the hole transport layer in the perovskite solar cells,which photovoltaic performance were studied.Results:At the reaction temperature of 210℃,it showed zinc blende CdSe QDs were synthesized with the even size and well-dispersed.The size was approximately 2.5 nm.The cells with CdSe QDs as the hole transport layer had open circuit voltage of 1.05 V,short-circuit current of 22.5 mA/cm^(2),fill factor of 0.65,and efficiency of 17%.It was higher than the cells,which had an efficiency of 14.9%,when it had non quantum dots as hole transport layers.Conclusion:CdSe QDs film was deposited as the hole transport layer in the perovskite solar cells that could generate more photogenerated carriers.Meanwhile,it could improve interface contact between hole transport layer and perovskite film layer,and had higher hole mobility.The solar cells with CdSe quantum dots as hole transport layers achieved better photovoltaic performance.