一种三层EPI结构SGT MOSFET设计

Design of SGT MOSFET with three-layer EPI structure

提出了一种三层外延(Epitaxy,EPI)结构的屏蔽栅沟槽金属氧化物半导体场效应晶体管(Shielded Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistor,SGT MOSFET)设计方案。利用Sentaurus TCAD工具,将单层EPI结构调整为三层EPI结构,通过控制变量法拉偏三层EPI结构的外延层厚度、电阻率等参数,仿真分析其参数变化对SGT MOSFET性能的影响。仿真结果表明,在相同的原胞尺寸条件下,与单层EPI结构SGT MOSFET相比,三层EPI结构SGT MOSFET通过横向电场调制作用降低了纵向电场的峰值,击穿电压提高9.5%,比导通电阻降低15.6%,有效地提高了器件的电学性能。

A design of shielded gate trench metal-oxide-semiconductor field-effect transistor(SGT MOSFET)with three-layer epitaxy(EPI)structure is proposed.In the Sentaurus TCAD tool,the single-layer EPI structure is reseted to a three-layer EPI structure,and the parameters such as epitaxial layer thickness and resistivity of the three-layer EPI structure are biased by the control variable method,and the effect of their parameter changes on the performance of SGT MOSFET is simulated and analyzed.The simulation results show that compared with the single-layer EPI structure SGT MOSFET,under the same primitive cell size,the peak value of the longitudinal electric field can be decreased by the modulation of the transverse electric field,thus the breakdown voltage is increased by 9.5%,and the specific on-resistance is decreased by 15.6%in the three-layers EPI structure,which effectively improves the electrical performance of the device.