高功率微波作用下半导体器件失效和防护分析

Failure Mechanisms Analysis on Semiconductor Devices and Microwave Protection Under High-power Microwave Pulse Injection

高功率微波(HPM)通过直接或间接耦合产生的电热效应会干扰电子通信设备的工作,甚至造成不可逆转的损伤或损毁。总结了在高功率微波作用下器件失效性分析和高功率微波防护的国内外研究进展;求解了横向扩散金属氧化物场效应管(LDMOSFET)、异质结双极型晶体管(HBT)、高电子迁移率晶体管(HEMT)在高功率脉冲注入下的电热应力场分布以及阈值功率;提出了用瞬态稳压抑制器(TVS)二极管设计微波防护电路的方法。最后分析了当前研究的局限性以及后续研究方向,为电路系统的设计和安全性评估提供参考。

High-power microwave(HPM)can interfere with the normal operation of electronic communication equipment through electro-thermal effect generated by direct or indirect coupling,and even cause irreversible damage.Firstly,this article summarizes the research progress of failure mechanisms analysis of semiconductor devices and microwave protection methods under HPM injection from home and abroad.Secondly,analysis of distributions of temperature,thermal stress,and electrical field and damage threshold power are revealed for three different types of devices,namely lateral diffused metal oxide semiconductor field-effect transistor(LDMOSFET),heterojunction bipolar transistor(HBT),and high electron mobility transistor(HEMT),under HPM pulse injection.Moreover,methods for designing HPM protection circuits using transient voltage suppressor(TVS)diodes have been proposed.Lastly,current research limitations and future progress are analyzed,for providing reference for the design and safety evaluation of circuit systems.