摘要
主要开展了193 nm紫外激光对单晶硅的损伤实验,观察分析了材料表面的损伤形貌,建立了193 nm紫外激光损伤单晶硅的理论模型,计算分析了材料的温度场及应力场分布,讨论了损伤形貌及损伤机理。研究结果表明:193 nm紫外激光对单晶硅的损伤机理主要为热力耦合效应,硅材料表面产生严重的熔融烧蚀和裂纹状的应力损伤,计算得到193 nm紫外激光对单晶硅的熔融损伤阈值为0.71 J/cm^(2)、热应力损伤阈值为0.42 J/cm^(2)。
The experiment research on damage in monocrystalline silicon irradiated by 193 nm ultraviolet laser is carried out,and the damage morphology and damage mechanism are studied and analyzed.Furthermore,the theoretical model of monocrystalline silicon irradiated by 193 nm laser is developed and a numerical simulation is performed to calculate temperature and thermal stress fields in monocrystalline silicon sample using finite element method.The results indicate that the melting damage threshold of monocrystalline silicon is 0.71 J/cm^(2) and the thermal stress damage threshold is 0.42 J/cm^(2).
作者
王玺
雷武虎
张永宁
王毕艺
李乐
Wang Xi;Lei Wuhu;Zhang Yongning;Wang Biyi;Li Le(State Key Laboratory of Pulsed Power Laser Technology,Electronic Countermeasure Institute,National University of Defense Technology,Hefei 230037,Anhui,China;Anhui Laboratory of Advanced Laser Technology,Electronic Countermeasure Institute,National University of Defense Technology,Hefei 230037,Anhui,China;National Key Laboratory of Electromagnetic Space Security,Tianjin 300308,China;Unit 94639 of PLA,Luan 237000,Anhui,China)
出处
《航天电子对抗》
2023年第5期44-47,64,共5页
Aerospace Electronic Warfare
基金
脉冲功率激光技术国家重点实验室基金项目(SKL2022ZR10)
先进激光技术安徽省实验室基金项目(AHL2021 ZR04)。
关键词
激光损伤
193
nm紫外激光
单晶硅
损伤阈值
laser damage
193 nm ultraviolet laser
monocrystalline silicon
damage threshold
