摘要
针对碳化硅基底深刻蚀过程中镍掩模的厚度会影响刻蚀效果,为解决电镀镍时电镀速率不同从而导致厚度无法保证的问题。采用COMSOL Multiphysics软件对阴极镀层厚度进行模拟的方法,研究了不同电导率对电镀速率的影响。通过对比相同条件下实际电镀速率来验证仿真的可靠性。结果表明:在50℃下,当电导率为15 S/m时,阴极镀层速率为408.3 nm/min;在相同条件下进行实验,测得实际电镀速率为425.5 nm/min,验证了仿真模型的可靠性,为电镀镍工艺优化以及SiC硬掩模刻蚀提供了仿真依据。
In view of the thickness of the nickel mask during the deep erosion of the silicon carbide substrate will affect the etching effect,so as to solve the problem that the thickness is different during nickel plating.The cathode plating thickness was simulated by COMSOL Multiphysics software to investigate the effect of different conductivity on the plating rate.The reliability of the simulation was verified by comparing the actual plating rates under the same conditions.The results show that at 50℃,when the conductivity is 15 S/m,the cathode plating rate is 408.3 nm/min.Under the same conditions,the actual plating rate is 425.5 nm/min,which verifies the reliability and provides the simulation basis for nickel plating process optimization and SiC hard mask etching.
作者
李培仪
王瑞
雷程
梁庭
白贵文
党伟刚
罗后明
Li Peiyi;Wang Rui;Lei Cheng;Liang Ting;Bai Guiwen;Dang Weigang;Luo Houming(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Shaanxi Huayan Aero-Instrument Co.,Ltd.,Hanzhong 723102,China)
出处
《电镀与精饰》
CAS
北大核心
2023年第12期71-77,共7页
Plating & Finishing
基金
山西省科技重大专项计划“揭榜挂帅”项目(202201030201004)
山西省重点研发计划项目(202102030201001&202102030201009)。
关键词
碳化硅
电镀镍
仿真模拟
silicon carbide
nickel plating
simulation