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阵列靶防护取样面板热效应仿真分析

Simulation analysis of thermal effects of protective samplingpanel for array target
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摘要 探测器阵列靶是测量激光光斑分布的常用设备,在高功率激光长时间辐照下阵列靶的取样面板需要更高的抗损伤能力。为了提高取样面板的抗损伤能力,从热设计角度出发,基于Ansys Workbench有限元分析软件,比较了不同厚度、不同热管排布方式以及不同界面传热系数下,防护取样面板在高功率激光长时间辐照下的温度场和热应力。分析结果表明,添加十字热管排布后,在激光辐照120 s时,6 mm厚度的取样面板耐受峰值功率密度从1470.9 W·cm^(-2)提高至3632.1 W·cm^(-2)。该仿真分析为阵列靶防护取样面板的设计提供了有效的理论和数据支持。 Detector array target is a common device for measuring the distribution of laser spot,and the sampling panel of array target needs higher damage resistance under long-term high-power laser irradiation.In order to improve the damage resistance of the sampling panel,based on the finite element analysis software Ansys Workbench,from the perspective of thermal design,the research compares the temperature field and thermal stress of the protective sampling panels with different thicknesses,different heat pipe arrangements and different interface heat transfer coefficients under long-term high-power laser irradiation.The analysis results show that after adding a cross heat pipe arrangement,the withstand peak power density of the sampling panel with a thickness of 6 mm increases from 1470.9 W·cm^(-2)to 3632.1 W·cm^(-2)when the laser irradiation lasts for 120 s.This simulation analysis provides effective theoretical and data support for the design of protective sampling panel for array target.
作者 张凯 谭逢富 侯再红 黄志刚 仇陈祥 张巳龙 吴毅 ZHANG Kai;TAN Fengfu;HOU Zaihong;HUANG Zhigang;QIU Chenxiang;ZHANG Silong;WU Yi(School of Environmental Science and Optoelectronic Technology,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Atmospheric Optics,Anhui Institute of Optics and Fine Mechanics,HFIPS,Chinese Academy of Sciences,Hefei 230031,China;Advanced Laser Technology Laboratory of Anhui Province,Hefei 230037,China)
出处 《量子电子学报》 CAS CSCD 北大核心 2023年第6期879-887,共9页 Chinese Journal of Quantum Electronics
基金 国家自然科学基金面上基金(41875033)。
关键词 激光技术 探测器阵列靶 有限元分析 热分析 静力学分析 laser technology detector array target finite element analysis thermal analysis static analysis
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