离子注入对单晶锗力学性能影响的分子动力学研究

Molecular Dynamics Study on Effect of Ion Implantation on Mechanical Properties of Single Crystal Germanium

为改善单晶锗的硬脆力学特征,用分子动力学模拟方法研究了3种不同剂量的离子注入对单晶锗表面的改性机理。分析结果表明,离子注入对锗基体造成了非晶相损伤,纳米压痕过程表现为晶格演化。纳米压痕结果揭示了非晶相的存在能够降低单晶锗的硬度和脆性,提高塑性。此外,锗基体的非晶相损伤程度和硬度与离子剂量有关。随着剂量的增加,非晶损伤程度加深,硬度降低。

To improve the hard and brittle mechanical characteristics of single crystal germanium(Ge),the molecular dynamics(MD)simulation was used to study the mechanism of surface modification on single crystal Ge by ion implantation with three different doses.Results show that the ion implantation causes amorphous phase damage to Ge matrix,and the nano-indentation process shows the lattice evolution.The nano-indentation results reveal that the existence of amorphous phase can reduce the hardness and brittleness of single crystal Ge and enhance its plasticity.Additionally,the degree of amorphous phase damage and the hardness of Ge matrix are related to the ion dose.With increasing the ion dose,the amorphous damage is deepened,and the hardness is decreased.