Ge_(0.92)Sn_(0.08)/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate

The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics.Recently,the Ge Sn alloy has been identified as a promising candidate for realizing Si-based light sources.However,previous research suffered from a small wafer size,limiting the throughput and yield.To overcome this challenge,we report the successful growth of Ge Sn/Ge multiple-quantum-well(MQW)p-i-n LEDs on a 12-inch(300-mm)Si substrate.To the best of our knowledge,this represents the first report of semiconductor LEDs grown on such a large substrate.The MQW LED epitaxial layer is deposited on a 12-inch(300-mm)(001)-oriented intrinsic Si substrate using commercial reduced pressure chemical vapor deposition.To mitigate the detrimental effects of threading dislocation densities on luminescence,the Ge Sn/Ge is grown pseudomorphically.Owing to the high crystal quality and more directness in the bandgap,enhanced electroluminescence(EL)integrated intensity of 27.58 times is demonstrated compared to the Ge LED.The MQW LEDs exhibit EL emission near 2μm over a wide operating temperature range of 300 to 450 K,indicating hightemperature stability.This work shows that Ge Sn/Ge MQW emitters are potential group-IV light sources for large-scale manufacturing.