摘要
The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2023年第12期2288-2294,共7页
Atomic Energy Science and Technology
基金
National Natural Science Foundation of China(11705277)
Science and Technology Research Project of Hubei Provincial Department of Education(Q20222607)
Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405)。
