摘要
随着未来无线通信需求的增长,通信系统需适用更多的频带和标准。针对可重构功率放大器各模式下工作带宽窄的缺点,本文基于简化实频技术和可重构理论,提出了一种拓展可重构功率放大器工作带宽的设计方法。通过在可重构理论中融入简化实频法的宽带设计方法,在设计过程中加入新的误差函数,对可变模式下的可重构电路结构进行判别,进而实现可重构宽带功率放大器设计。为了验证该方法的有效性,并满足实际设计指标,采用中国科学院微电子研究所自主研发的LDMOS晶体管设计并制作了适用于GSM网络和LTE网络的一个频率可切换的宽频可重构功率放大器。测试结果表明,该可重构功率放大器在不同模式下可分别工作在0.6~1.1 GHz和1.1~1.6 GHz频段,饱和输出功率超过40 dBm,漏极效率(DE)在50%~60%之间。因此,本文提出的设计方法可以降低可重构宽带功率放大器的设计难度,较好的发挥晶体管性能,降低成本,在实际基站射频电路设计中具有很好的应用意义。
With the future wireless communication demand growth,communication systems need to apply more frequency bands and standards.Aiming at the shortcomings of the narrow operating bandwidth of reconfigurable power amplifiers in each mode,this paper proposes a design method to expand the operating bandwidth of reconfigurable power amplifiers based on the simplified real-frequency technique and reconfigurable theory.By incorporating the broadband design method of simplified real-frequency method in the reconfigurable theory,a new error function is added in the design process to discriminate the reconfigurable circuit structure in variable modes,then realize the reconfigurable broadband power amplifier design.In order to verify the effectiveness of the method and meet the actual design specifications,a frequency-switchable wideband reconfigurable power amplifier for GSM network and LTE network is designed and fabricated by using LDMOS transistors independently developed by the Institute of Microelectronics,Chinese Academy of Sciences.The test results show that the reconfigurable power amplifier can operate in the frequency bands of 0.6~1.1 GHz and 1.1~1.6 GHz in different modes,respectively,with a saturated output power of more than 40 dBm,and a drain efficiency(DE)of between 50%and 60%.Therefore,the design method proposed in this paper can reduce the design difficulty of reconfigurable broadband power amplifiers,better utilize the transistor performance,and reduce the cost,which is of great significance for application in the design of RF circuits of practical base stations.
作者
南敬昌
戴涛
丛密芳
刘超
南星伊
任建伟
Nan Jingchang;Dai Tao;Cong Mifang;Liu Chao;Nan Xingyi;Ren Jianwei(School of Electrics and Information Engineering,Liaoning Technical University,Huludao 125105,China;School of Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China)
出处
《电子测量与仪器学报》
CSCD
北大核心
2023年第9期25-32,共8页
Journal of Electronic Measurement and Instrumentation
基金
国家自然科学基金面上项目(61971210)
企业合作项目资助:射频LDMOS功放器件研究与测试项目资助。