离子刻蚀多晶铜机理及其对表面形貌的影响

Mechanism of ion etching polycrystalline copper and influence on surface morphology

为了更好地理解离子刻蚀纯铜表面的形貌及形成机理,采用氩离子注入的方式对多晶纯铜进行刻蚀。通过改变功率参数和原始表面粗糙度的方式探究不同条件下多晶纯铜表面形貌随刻蚀时间变化的规律。采用扫描电子显微镜和白光干涉仪对刻蚀后多晶纯铜的晶粒取向、表面形貌和表面粗糙度进行表征与测试。利用电子背散射衍射技术和白光干涉仪两种技术揭示晶粒取向与刻蚀速率的关系。结果表明:功率参数和原始表面粗糙度均能对形貌变化产生影响,且刻蚀速率的差异是导致形貌变化的主要原因;不同晶面的刻蚀程度是各向异性的,其中{100}取向晶粒的刻蚀速率比{111}和{110}取向晶粒的刻蚀速率更高;刻蚀后表面粗糙度的演变经历两个阶段:快速增加到逐渐稳定。

In order to better understand the surface morphology and formation mechanism of ion-etched pure copper,argon ion implantation was used to etch polycrystalline pure copper.By changing the power parameters and the original surface roughness,the variation of the surface morphology of polycrystalline pure copper with etching time under different conditions was investigated.Scanning electron microscope and white light interferometer were used to characterize and test the grain orientation,surface morphology and surface roughness of polycrystalline pure copper after etching.The relationship between grain orientation and etching rate was revealed by electron backscattering diffraction and white light interferometer.The results show that both the power parameters and the original surface roughness can affect the morphology change,and the difference of etching rate is the main reason for the morphology change.The etching degree of different crystal surfaces is anisotropic,and the etching rate of{100}oriented grains is faster than that of{111}and{110}oriented grains.The evolution of surface roughness after etching goes through two stages:rapid increase to gradual stability.