金属掺杂对碲化镉纳米器件整流特性的影响

Effect of Metal Doping on the Rectification Characteristics of CdTe Nanodevices

结合密度泛函理论与非平衡格林函数,系统研究了过渡金属(铜铬、铜钒和铜钛)共掺杂碲化镉纳米电子器件的伏安特性.结果表明,3种不同共掺杂碲化镉纳米器件的伏安特性曲线均为二极管伏安特性曲线,并且在[+0.4 V,+0.8 V]偏压范围内均产生了强整流效应,最高整流比分别为5.4×10^(4),3.8×105,2.1×106,投影态密度进一步印证了器件在+1.0 V偏压条件下的高整流比.在铜铬共掺杂条件下,随着中心区域沟道长度的增加,器件的电流在+0.9 V偏压时有一定程度的降低,但是在[+0.5 V,+0.7 V]偏压范围内,整体整流性能得到了显著提升.

Based on density functional theory combined with non-equilibrium Green's function,the voltammetric properties of transition metal Cu-Cr,Cu-V and Cu-Ti co-doped CdTe nanoelectronic devices were systematically investigated.The results show that the voltammetric curves of the three different co-doped CdTe nanodevices exhibit diode voltammetric curves and produce strong rectification effects in the bias voltage range of[+0.4 V,+0.8 V].The highest rectification ratios are 5.4×10^(4),3.8×105,and 2.1×106,respectively.The projected density of states further confirms the high rectification ratio of the device at+1.0 V bias.Under the Cu-Cr co-doping condition,the device current decreases somewhat at+0.9 V bias with increasing channel length in the center region,but the overall rectification performance is significantly improved in the[+0.5 V,+0.7 V]bias range.