面向GaN功率电子器件应用的高频化检测平台

High frequency detection platform for GaN power electronics applications

GaN(氮化镓)作为第三代半导体功率电子器件的典型代表,因其具有更宽的禁带宽度、更高的击穿电场、更高的工作频率、更高的电子饱和速率等优越性能,GaN功率电子器件已广泛应用在电源管理及其他各个领域。文章主要研究面向GaN功率电子器件应用的高频化检测平台,使其具备高开关频率工作的基础构架,具备各种驱动控制策略的灵活切换的功能,可为各种应用环境提供具备GaN器件动态性能评价及动态可靠性评价的基础构架。

As a typical representative of the third generation semiconductor power electronic devices,GaN(Gallium Nitride)has been widely used in power management and various other fields due to its superior performance such as wider bandgap width,higher breakdown electric field,higher operating frequency,and higher electron saturation rate.This article mainly studies a high-frequency detection platform for GaN power electronic device applications,which has a basic architecture for high switching frequency operation,flexible switching functions for various drive control strategies,and can provide a basic architecture for various application environments.It also has a basic architecture for dynamic performance evaluation and dynamic reliability evaluation of GaN devices.