基于椭偏法对薄膜器件参数测量及反向优化研究

Research on parameter measurement and reverse optimization of thin film devices based on ellipsometry

传统薄膜器件通常使用物理气相沉积法进行开发及镀制,难以实现薄膜镀制与设计的一致性,导致薄膜器件镀制及研发与设计不符。为此,文章基于椭偏法对薄膜器件进行测量及反向优化进行研究,建立薄膜参数测量及反向优化模型,使用椭偏仪对研发镀制的Ag金属薄膜器件进行网格划分测量区域及模型优化;使用模型将介电常数的实部虚部进行拟合,测得材料的介电常数求出材料的折射率和消光系数;最后,拟合膜层厚度为20.226nm,测得薄膜参数厚度、折射率n和消光系数k数据与镀制薄膜数据进行对比,厚度相差3.562nm,镀制与测量值具有一定差异,测得折射率和消光系数数据与传统方式相比更合理和精准。

The traditional thin film device is usually developed and plated by physical vapor deposition method,which is difficult to achieve the consistency between the thin film plating and the design,resulting in the inconsistency between the thin film device plating and the development and design.In this paper,the measurement and reverse optimization of thin film devices are studied based on the ellipsometry method,and the measurement and reverse optimization model of thin film parameters are established.The measuring area and model optimization of plated Ag metal thin film devices are divided by grid using the ellipsometer.The real and imaginary parts of the dielectric constant are fitted by the model,and the refractive index and extinction coefficient of the material are obtained by measuring the dielectric constant.Finally,the fitting film thickness was 20.226nm,and the measured film parameter thickness,refractive index n and extinction coefficient k were compared with that of the plated film.The thickness difference between the plated film and the measured value was 3.562nm,and the measured refractive index and extinction coefficient could be measured according to the data,which was more reasonable and accurate compared with the traditional method.