ZrO_(2)/InP和ZrO_(2)/InAs堆栈的元素扩散研究

Study of Element Diffusion in ZrO_(2)/InP and ZrO_(2)/InAs Stacks

Ⅲ-Ⅴ族化合物半导体有望在5 nm以下节点替代Si作为场效应管的沟道材料,其与高k栅介质界面质量对器件性能极为关键。本文分别在InAs和InP衬底上通过H_(2)^(18)O蒸汽预处理表面,再利用原子层沉积技术原位制备了ZrO_(2)薄膜,通过角分辨X射线光电子能谱和飞行时间二次离子质谱技术系统性地研究了退火前后界面处衬底元素原子和氧原子扩散行为,并讨论了物理机制。本工作将加深Ⅲ-Ⅴ/高k栅介质界面在材料学上的理解。

Ⅲ-Ⅴ compound semiconductors are expected to replace silicon as the channel material for FETs at sub-5 nm nodes,and the quality of their interface with high-k gate dielectrics is extremely critical to device performance.The surfaces of InAs and InP substrates are pretreated with H_(2)^(18)O vapor and then ZrO_(2) films are deposited in situ on the substrates using atomic layer deposition.The diffusion behaviors of atoms from substrates and oxygen atoms at the interface before and after annealing are systematically investigated.The interface physics and chemistry are characterized by angle-resolved X-ray photoelectron spectroscopy(ARXPS)and time-of-flight secondary ion mass spectrometry(TOF-SIMS)techniques,and the physical mechanisms are discussed.The work will deepen the materials science understanding of the Ⅲ-Ⅴ/high-k gate dielectric interfaces.