不同参数对静态随机存储器总剂量效应的影响

Impact of different parameters on the static random access memory under the total ionizing dose

基于中国原子能科学研究院钴源建立的器件总剂量辐照装置试验平台,开展了静态随机存储器(SRAM)的总剂量效应研究。分别研究了器件特征工艺尺寸、累积辐照剂量、辐照剂量率以及温度对器件总剂量效应的影响。研究结果表明:在一定范围内剂量率对器件的总剂量效应影响不大,器件特征工艺尺寸越大总剂量效应的影响越大,温度越高总剂量效应影响越弱。此外还测量得到了该总剂量辐照实验平台的典型剂量率分布及均匀性。相关结果为宇航、核工业用电子器件抗辐射加固设计提供了一定的参考。

The effect of the total ionizing dose(TID)on the static random access memory(SRAM)is conducted on the 60Co radioactive source in the China Institute of Atomic Energy.The study explores the influence of the device process size,dose rate,temperature and total dose on TID.The results indicated that within a certain range,the dose rate had little influence on the TID of the device.The larger the characteristic size of the device,the greater TID effect,while the higher temperature,the weaker the total dose effect.In addition,the typical dose rate and the uniformity of the source are achieved.The research of the paper provide an insight into radiation hardening,particularly in the aerospace and the nuclear industries.