期刊文献+

一种应用于Sub-6G的宽带低功耗低噪声放大器

Broadband Low-Noise Amplifier with Low Power Consumption for Sub-6G Applications
下载PDF
导出
摘要 提出了一种工作频率覆盖Sub-6G的宽带低噪声放大器(LNA),该电路采用电阻自偏置AB类放大器级联共源共栅放大器的结构,在实现宽带工作的同时兼具高增益、低功耗的特点。该LNA采用TSMC 40 nm CMOS工艺,在1.3 V工作电压下,增益高于26 dB,噪声系数低于2.6 dB,三阶输入交调截点为-4.6 dBm@6 GHz,1 dB压缩点为3.4 dBm@6 GHz,静态功耗仅为0.94 mW,版图面积为0.014 mm^(2)。 A broadband low-noise amplifier(LNA)with operating frequency covering Sub-6G is proposed.The circuit adopts the structure of resistive self-biased class-AB amplifiers cascaded with a common source and common gate amplifier.It has the characteristics of high gain and low power consumption while realizing broadband operation.The LNA is designed with TSMC 40 nm CMOS process.The gain of the LNA is more than 26 dB,the noise figure is below 2.6 dB,the third order input intercept point is-4.6 dBm@6 GHz,the 1 dB compression point is 3.4 dBm@6 GHz,the static power consumption is only 0.94 mW,and the layout area is 0.014 mm^(2)at an operating voltage of 1.3 V.
作者 倪城 王毅炜 杨定坤 NI Cheng;WANG Yiwei;YANG Dingkun(School of Information Science and Engineering,Wuhan University of Science and Technology,Wuhan 430081,China;Chengdu CORPRO Technology Co.,Ltd.,Chengdu 610093,China)
出处 《电子与封装》 2023年第12期39-44,共6页 Electronics & Packaging
基金 湖北省大学生创新创业训练计划项目(D202305092148362688)。
关键词 低噪声放大器 TSMC 40 nm CMOS 宽带 低功耗 low-noise amplifier TSMC 40 nm CMOS broadband low power consumption
  • 相关文献

参考文献4

二级参考文献19

  • 1WANG R-L, LIN M-C, YANG C-F, et al. A 1 V 3. 1- 10. 6 GHz full-band cascoded UWB LNA with resistive feedback [C] // IEEE Conf Elec Dev and Sol Sta Circ. Tainan, Taiwan, China. 2007: 1021-1023.
  • 2HUANG L, FENG L-S, LIN F-J. A 0. 18 μm CMOS 3- 5 GHz switched gain low noise amplifier for UWB system [C]//IEEE Int Symp Radio Frequency Integration Technology. Singapore. 2009 : 162-165.
  • 3YANG C-L, HSIEH W L, CHIANG Y C. A fully integrated and high linearity UWB LNA implemented with current-reused technique and using single-biasing voltage [C] // Europ Conf Wireless Technologies. Munich, Germany. 2007: 94-97.
  • 4SANSEN W M C. Analog design essentials [M]. New York: Springer, 2006.
  • 5LIN Y-S, CHEN C-Z, YANG H-Y, et al. Analysis and design of a CMOS UWB LNA with dual-RLC- branch wideband input matching network [J]. IEEE Trans Microwave Theory and Techniques, 2010, 58 (2) : 287-296.
  • 6LEE T H. The design of CMOS radio-frequency integrated circuits [M]. 2nd Ed. Cambridge, UK: Cambridge University Press, 2004 : 364-400.
  • 7DUAN J-H, HAN X-T, LI S. A wideband CMOS low noise amplifier for 3-5 GHz UWB systems [C]// MAPE'2009. Beijing, China. 2009:1002-1005.
  • 8SU J-F, FU Z-Q, YUAN H-Q, et al. An ultra-wide- band CMOS low noise amplifier for 3-5 GHz UWB wireless receivers [C] //7th Int Conf ASIC. Daejeon, Korea. 2007:407-410.
  • 9JUNG J, CHUNG K, YUN T, et al. Ultra wideband low noise amplifier using a cascade feedback topology [C] // Topic Meeting on Silicon Monolithic Integr Circ in RF Syst. San Diego, CA, USA. 2006: 202-205.
  • 10MAISURAH S, KIN W S, KUNG F, et al. 0. 18 ptm CMOS low noise amplifier for 3-5 GHz ultra wideband system [C] // Int Symp Integr Circ. Singapore. 2007: 100-103.

共引文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部