高压电缆缓冲阻水层劣化机理及评价技术研究

Study on Deterioration of Semi-Conductive Buffering Layer for High Voltage Cables and Evaluation Technology

针对高压电力电缆半导电缓冲层技术现状,对阻水带材特性、半导电缓冲层设计、相关制造工艺进行展开分析,归纳各环节与电缆成品缓冲层性能的相关因素,论述各因素的风险与累积影响。基于高压电力电缆外层屏蔽结构,提出高压电力电缆半导电缓冲层间接触评价方法与技术实现,基于批量样品的测评与统计,给出半导电缓冲层间电接触性能劣化分级。最后提出高压电缆缓冲层改进方向与可靠性提升建议。

Focus on the semi-conductive buffering layer within high voltage power cables,the deterioration mechanisms of water-blocking semi-conductive buffering tapes,buffering layers and manufacturing process were analyzed,and the risks and cumulative effects of each factor were discussed.Based on the outer screen structure and the interlayer electrical contact pattern within high voltage power cables,the quantification method and realization of electric contact were proposed,and the contact range level of the semi-conductive buffering layer of high voltage power cable was presented.The solution of deterioration factors,simplified risk accumulation mode,and methods for designing and engineering mitigation of semi-conductive buffering layers were summarized.