摘要
本文基于0.18μm CMOS工艺提出了一种新型微波人工表面等离激元(Spoof Surface Plasmon Polariton,SSPP)耦合式滤波器结构并进行加工和测量,同时设计了一种太赫兹SSPP四边形滤波器并进行了全波仿真.新型微波SSPP耦合式滤波器通带为11~12.3 GHz(S_(11)<-10 dB,S_(21)>-3.5 dB),结构紧凑,电尺寸仅为0.0184λ_(g)×0.0084λ_(g),远小于其他基于集成电路工艺设计的无源滤波器.通过优化与调整,可以将新型微波SSPP耦合式滤波器的性能进一步优化到要求范围内.太赫兹SSPP四边形滤波器通带为210.8~241.3 GHz(S_(11)<-10 dB,S_(21)>-4.7 dB),带内插入损耗仅为2.7 dB,带外抑制良好.两种SSPP滤波器均采用非接触式电磁耦合的新型能量传递方式,结构设计新颖,并且微波段SSPP耦合式滤波器小型化优势明显,电尺寸仅为0.019λ_(g)×0.009λ_(g),易于芯片集成.本文提出的两种SSPP滤波器经过等比例缩放,可工作在微波、毫米波以及太赫兹频段,为新型片上无源滤波器的研究设计提供参考和借鉴.
In this paper,a novel SSPP(Spoof Surface Plasmon Polariton)filter is proposed,fabricated and measured based on 0.18μm CMOS technology.Meanwhile an extra terahertz SSPP filter is designed and its full-wave simulations are provided to prove feasibility in THz band.This novel SSPP filter has a passband of 11~12.3 GHz(S_(11)<-10 dB,S_(21)>-3.5 dB),and its size is compact with only 0.0184λ_(g)×0.0084λ_(g)in electrical size,making it much smaller than other passive filters designed in IC technology.A designed terahertz frequency band SSPP filter,with a full EM simulated pass⁃band of 210.8~241.3 GHz(S_(11)<-10 dB,S_(21)>-4.7 dB),possesses an in-band insertion loss less than 2.7 dB and an superior out-of-band suppression.Both types of SSPP filters adopt a new energy transfer method of non-contact electromagnetic coupling,with a novel structural design.Moreover,the miniaturization advantage of the microwave section SSPP coupled filter is obvious,with an electrical size of only 0.019λ_(g)×0.009λ_(g),easy to integrate with chips.Equally scaled novel fil⁃ters proposed in this work can work in microwave,millimeter wave and terahertz frequency band,which could be a refer⁃ence for the research of on-chip filters in the future.
作者
吴杰民
陆恺
汪江鹏
高昊
段宗明
崔铁军
鲍迪
WU Jie-min;LU Kai;WANG Jiang-peng;GAO Hao;DUAN Zong-ming;CUI Tie-jun;BAO Di(Institute of Electromagnetic Space,Southeast University,Nanjing,Jiangsu 210096,China;State Key Laboratory of Millimeter Waves,Southeast University,Nanjing,Jiangsu 210096,China;Silicon Austria Labs,Linz 4020,Austria;The 38th Institution of China Electronics Technology Group Corporation,Hefei,Anhui 230088,China)
出处
《电子学报》
EI
CAS
CSCD
北大核心
2023年第10期2708-2714,共7页
Acta Electronica Sinica
基金
国家自然科学基金(No.62288101)
国家重点研发计划项目(No.2017YFA0700201,No.2017YFA0700202,No.2017YFA0700203)
高等学校学科创新引智计划项目(No.111-2-05)
江苏省前沿领先技术基础研究项目(No.BK20212002)
国家科学技术部资助项目(No.G2021016011L)。