同步脉冲偏压对低温制备的CrSiN薄膜结构及性能的影响研究

Influence of Synchronized Pulsed-bias on Microstructure and Properties of CrSiN Films Deposited at Low Temperature

利用高功率脉冲磁控溅射技术,研究了同步脉冲偏压对低温沉积的CrSiN薄膜的组织结构、力学、摩擦学及耐腐蚀性能的影响。研究表明,随着同步脉冲偏压升高,荷能离子轰击对薄膜表面的溅射作用增强,薄膜中的轻质元素含量略有下降,同时c-CrN(111)晶面衍射峰消失,薄膜呈明显的(200)晶面择优取向,晶粒细化,致密度提高。在−500 V偏压下沉积的薄膜硬度最大,达到16.5 GPa,腐蚀电流密度可达2.09×10^(−10)A/cm^(2);磨粒磨损及黏着磨损为CrSiN薄膜的主要磨损机制。调控同步脉冲偏压实现了低温下具有优良力学性能和耐蚀性能的CrSiN薄膜的可控制备,为拓宽CrSiN薄膜在温度敏感基体上的适用性提供了新的研究思路与解决途径。

The work aims to achieve the controlling preparation of high-performance CrSiN films at low deposition temperature,the HiPIMS technique was utilized to prepare CrSiN nano-composite films by regulating the synchronized pulsedbias.The effects of the synchronized pulsed-bias on the microstructure,mechanics,tribology and corrosion resistance of films deposited at low temperature were studied.With the increase of the synchronized pulsed-bias,the content of light elements decreased slightly,which can be attributed to the energetic bombardment of the ions as well as the"re-sputtering effect"on the film growing surface.Meanwhile,the diffraction peak of c-CrN(111)disappeared and the preferred orientation of c-CrN(200)can be obtained.Due to the grain refinement and films density increase,the mechanical and corrosion resistance properties improved significantly.The film deposited at−500 V bias has maximum hardness of 16.5 GPa and minimum Icorr of 2.09×10^(−10)A/cm^(2).Under high speed and room temperature tribological situation,the abrasive and adhesive wear were the major wear mechanism for the CrSiN films.The study achieved the controlling preparation of the CrSiN films with excellent corrosion resistance properties at low temperature by utilizing the synchronized pulsed-bias,which provides the new study ideas as well as the solution ways for broadening applications of CrSiN films on the thermal sensitive matrix.