摘要
Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.
作者
韩长峰
钱若曦
向超宇
钱磊
Changfeng Han;Ruoxi Qian;Chaoyu Xiang;Lei Qian(Laboratory of Advanced Nano-Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315300,China;Division of Functional Materials and Nanodevices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Jiangsu JITRI Molecular Engineering Inst.Co.,Ltd.,Changshu 215500,China;Shenzhen Research Institute Beijing Institute of Technology,Shenzhen 518057,China)
基金
Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003)
Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085)
Ningbo 3315 Programme (Grant No.2020A-01-B)
YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B)
Zhujiang Talent Programme (Grant No.2016LJ06C621)。
