摘要
Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing(SS).In this work,regarding the p-type CS-FETs,we propose TcX_(2) and ReX_(2)(X=S,Se)as the injection source to realize the sub-thermal switching for holes.First-principles calculations unveils the cold-metal characteristics of monolayer TcX_(2) and ReX_(2),possessing a sub-gap below the Fermi level and a decreasing DOS with energy.Quantum device simulations demonstrate that TcX_(2) and ReX_(2) can enable the cold source effects in WSe_(2) p-type FETs,achieving steep SS of 29-38 mV/dec and high on/off ratios of(2.3-5.6)×10^(7).Moreover,multilayer Re S2retains the cold metal characteristic,thus ensuring similar CS-FET performances to that of the monolayer source.This work underlines the significance of cold metals for the design of p-type CS-FETs.
作者
汪倩文
武继璇
詹学鹏
桑鹏鹏
陈杰智
Qianwen Wang;Jixuan Wu;Xuepeng Zhan;Pengpeng Sang;Jiezhi Chen(School of Information Science&Technology,Qingdao University of Science&Technology,Qingdao 266000,China;School of Information Science and Engineering,Shandong University,Qingdao 266000,China)
基金
supported by the National Natural Science Foundation of China (Grant Nos.62034006,92264201,and 62104134)
the Natural Science Foundation of Shandong Province of China (Grant Nos.ZR2023QF076 and ZR2023QF054)。