Ferroelectric artificial synapse for neuromorphic computing and flexible applications

Research of artificial synapses is increasing in popularity with the development of bioelectronics and the appearance of wearable devices.Because the high-temperature treatment process of inorganic materials is not compatible with flexible substrates,organic ferroelectric materials that are easier to process have emerged as alternatives.An organic synaptic device based on P(VDF-TrFE)was prepared in this study.The device showed reliable P/E endurance over 104 cycles and a data storage retention capability at 80℃ over 104 s.Simultaneously,it possessed excellent synaptic functions,including short-term/long-term synaptic plasticity and spike-timing-dependent plasticity.In addition,the ferroelectric performance of the device remained stable even under bending(7 mm bending radius)or after 500 bending cycles.This work shows that low-temperature processed organic ferroelectric materials can provide new ideas for the future development of wearable electronics and flexible artificial synapses.