n型隧穿氧化层钝化背接触太阳能电池发射极激光硼掺杂工艺

Boron Laser Doping Technology for Emitter of n-Type Tunneling Oxide Layer Passivated Back Contact Solar Cells

在n型隧穿氧化层钝化背接触(TBC)太阳能电池发射极制程中引入激光掺杂可快速实现发射极图案化制作,简化电池制作流程。通过激光将硼硅玻璃(BSG)中的硼掺入多晶硅层中,形成图案化的掺硼多晶硅层。研究了不同激光参数及掺杂次数对TBC太阳能电池发射极钝化性能和方块电阻的影响,实验结果表明,当激光功率为70 W、掺杂次数为2次时,太阳能电池发射极可获得良好的钝化效果和合适方阻,其中掺杂浓度达到8.1×10^(19)cm^(-3),隐开路电压>723 mV,方块电阻约为150Ω/□。制备的TBC太阳能电池的平均光电转换效率可达24.691%,短路电流密度为42.31 mA/cm^(2),开路电压为718.7 mV,填充因子为81.2%。

The introduction of laser doping in the emitter process of the n-type tunneling oxide layer passivated back contact(TBC)solar cells can quickly realize the emitter patterning and simplify the fabrication process of the cell.Boron from borosilicate glass(BSG)was doped into the polysilicon layer by laser to form a patterned boron-doped polysilicon layer.The effects of different laser parameters and doping times on the passivation performance and square resistance of the TBC solar cell emitters were studied.The experimental results show that when the laser power is 70 W and the doping times are 2 times,the emitter of the solar cell can obtain good passivation effect and suitable square resistance,where the doping concentration reaches 8.1×10^(19)cm^(-3),implied open circuit voltage is>723 mV,and square resistance is about 150Ω/□.The average photoelectric conversion efficiency of the prepared TBC solar cell can reach 24.691%,the short-circuit current density is 42.31 mA/cm^(2),the open-circuit voltage is 718.7 mV,and the fill factor is 81.2%.