摘要
探索了纯蓝光ZnSe基核/壳结构量子点的合成方法,研究了各种反应参数对量子点发光性能的影响,通过Te元素掺杂和尺寸调控相结合的方法使量子点发光波长红移至蓝光波段,并通过引入氟化锌对表界面缺陷进行腐蚀/钝化,从而提高了所制备量子点的发光强度。结果表明,当初始反应温度为200℃、初始反应时间为120 min时,得到的ZnSe核可以实现380 nm波长的发光,且更加适合后续的Te元素掺杂;当Te和Se的摩尔比为0.01时,所合成的ZnSe基核/壳量子点在实现442 nm波长的蓝色发光的同时,保持了15 nm的窄发光半峰全宽;当ZnF_(2)的添加量为1.5 mmol时,量子点的发光强度比不添加ZnF_(2)时提升了约3倍;量子点尺寸均一且在正辛烷中保持了高分散性,具有良好的成膜性,所制备出的量子点薄膜表面致密平滑无明显裂纹。本研究结果有助于促进高质量无毒蓝光ZnSe基核/壳量子点合成技术的发展及其在下一代显示技术中的应用。
The synthesis method of pure-blue light-emitting ZnSe based core/shell quantum dots was explored,and the effects of various reaction parameters on the luminescent properties of the quantum dots were investigated.By combining Te element doping and size control,the luminescent wavelength of the ZnSe based quantum dots is red-shifted to blue band,and the luminescent intensity of the prepared quantum dots is improved by introducing zinc fluoride to corrode/passivate the surface interface defects.The results show that when the initial reaction temperature is 200℃and the initial reaction time is 120 min,the obtained ZnSe core can acquire luminescence of 380 nm wavelength,which is more suitable for subsequent Te element doping.And when the molar ratio of Te and Se is 0.01,the synthesized ZnSe based core/shell quantum dots achieve blue luminescence of 442 nm wavelength while maintaining a narrow full width at half maximum of 15 nm.Compared with the quantum dots without ZnF2,the luminescence intensity of the quantum dots with 1.5 mmol of ZnF2 increases by about three times.The synthesized quantum dots have uniform size and maintain high dispersibility in octane,exhibiting good film-forming properties.The prepared quantum dot films have compact and smooth surfaces without obvious cracks.The research results contribute to promote the development of synthesis technology for high-quality non-toxic blue lignt-emitting ZnSe based core/shell quantum dots and their application in the next generation display technology.
作者
贾汉林
伍仕停
方佳庆
余春燕
翟光美
Jia Hanlin;Wu Shiting;Fang Jiaqing;Yu Chunyan;Zhai Guangmei(Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China)
出处
《微纳电子技术》
CAS
北大核心
2023年第11期1774-1783,共10页
Micronanoelectronic Technology
基金
山西省基础研究计划项目(202103021224055)。